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Deep defects in 3C-SiC generated by H+- He+-implantation or by irradiation with high-energy electrons
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2010 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, p. 439-442Article in journal (Refereed) Published
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2010. Vol. 645-648, p. 439-442
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Computer and Information Sciences
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URN: urn:nbn:se:ri:diva-32097OAI: oai:DiVA.org:ri-32097DiVA, id: diva2:1151956
Available from: 2017-10-24 Created: 2017-10-24 Last updated: 2020-12-01Bibliographically approved

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