Photoluminescence photoresponse from InSb/InAs-based quantum dot structuresShow others and affiliations
2012 (English)In: Optics Express, E-ISSN 1094-4087, Vol. 20, no 19, p. 21264-71Article in journal (Refereed) Published
Abstract [en]
InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 μm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 μm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 μm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.
Place, publisher, year, edition, pages
2012. Vol. 20, no 19, p. 21264-71
Keywords [en]
Diodes, Indium antimonides, Indium arsenide, Photodetectors, Photoluminescence, Semiconductor quantum dots, Semiconductor quantum wells, Vapors
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-32020DOI: 10.1364/OE.20.021264Scopus ID: 2-s2.0-84866264107OAI: oai:DiVA.org:ri-32020DiVA, id: diva2:1151878
2017-10-242017-10-242022-09-15Bibliographically approved