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Growth Optimization, Strain Compensation Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging
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2013 (English)In: Crystal Structure Theory Applications, ISSN 2169-2491, Vol. 2, p. 46-56Article in journal (Refereed) Published
Abstract [en]

InAs/GaSb type-II superlattice (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature group-V soaking times were optimized with respect to interface transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed tested to be efficient to tune the overall strain between tensile compressive without degradation of interface optical quality. The effect of the proposed methods is modeled by analytic functions. Bstructure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated._x000D_

Place, publisher, year, edition, pages
2013. Vol. 2, p. 46-56
Keywords [en]
InAs/GaSb, Type-II Superlattce, Molecular Beam Epitaxy, Strain Compensation
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-31967DOI: 10.4236/csta.2013.22007OAI: oai:DiVA.org:ri-31967DiVA, id: diva2:1151825
Available from: 2017-10-24 Created: 2017-10-24 Last updated: 2018-01-13Bibliographically approved

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