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Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots
RISE, Swedish ICT, Acreo.
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2013 (English)In: Infrared physics & technology, ISSN 1350-4495, E-ISSN 1879-0275, Vol. 59, p. 89-92Article in journal (Refereed) Published
Abstract [en]

We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 Î¼m at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs._x000D_

Place, publisher, year, edition, pages
2013. Vol. 59, p. 89-92
Keyword [en]
InGaSb, QD, MOVPE, LWIR
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-31966DOI: 10.1016/j.infrared.2012.12.020OAI: oai:DiVA.org:ri-31966DiVA: diva2:1151824
Available from: 2017-10-24 Created: 2017-10-24 Last updated: 2018-01-13Bibliographically approved

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