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InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
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2014 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 50, no 23, p. 1731-3Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2014. Vol. 50, no 23, p. 1731-3
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Computer and Information Sciences
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URN: urn:nbn:se:ri:diva-31940OAI: oai:DiVA.org:ri-31940DiVA, id: diva2:1151798
Available from: 2017-10-24 Created: 2017-10-24 Last updated: 2018-01-13Bibliographically approved

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