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InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
Korea Institute of Science and Technology, South Korea.
Halmstad University, Sweden; Lund University, Sweden.
Korea Institute of Science and Technology, South Korea.
Korea Institute of Science and Technology, South Korea.
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2014 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 50, no 23, p. 1731-3Article in journal (Refereed) Published
Abstract [en]

High-temperature operating performance of p-i-p quantum dots-in-a-well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped self-assembled InAs quantum dots (QDs) asymmetrically positioned in In 0.15 Ga 0.85 As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

Place, publisher, year, edition, pages
2014. Vol. 50, no 23, p. 1731-3
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-31940DOI: 10.1049/el.2014.2437Scopus ID: 2-s2.0-84912136838OAI: oai:DiVA.org:ri-31940DiVA, id: diva2:1151798
Available from: 2017-10-24 Created: 2017-10-24 Last updated: 2019-08-13Bibliographically approved

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