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Simulation-driven development of a novel SiC embedded power module design concept
RISE - Research Institutes of Sweden, ICT, Acreo.
ON SemiconductorFairchild Semiconductor Gmbh, Germany.
ON SemiconductorFairchild Semiconductor Gmbh, Germany.
AT & S Austria Technologie & Systemtechnik, Austria.
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2017 (English)In: 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2017, 2017Conference paper, Published paper (Refereed)
Abstract [en]

Silicon carbide embedded power modules enable a compact and cost competitive packaging solution for high-switching frequency and high-temperature operation applications. Power module packaging technologies span several engineering domains. At the early design stage, simulation-driven development is necessary to shorten the design period and reduce the design cost. This paper presents a novel design concept of a three-phase embedded power module (1200 V, 20 A, 55 mm × 36 mm × 0.808 mm) including silicon carbide metal-oxide-semiconductor field-effect transistor and antiparallel diode dies. Based on the E/CAD design data different layer built-up designs have been tested against thermal, mechanical, and electrical behavior. The obtained simulation data then have been evaluated against a commercial available power module (Motion Smart Power Module SMP33) which utilizes over mold direct bonded copper substrates with soldered semiconductor dies and bond wire contacts. Compared to the conventional module, the loop conductive interconnection parasitic inductance and resistance of the design concept (Vdc+ to Vdc-) reduces approximately by 88 % and 72 %, respectively. The average junction to case thermal resistance has been improved by approximately more than 10 % even though the total package size reduces by approximately 88 %. Furthermore, the contours of deformation and stresses have been investigated for the design concept in the thermomechanical simulation.

Place, publisher, year, edition, pages
2017.
Keyword [en]
Carbide dies, Chip scale packages, Field effect transistors, High temperature applications, High temperature operations, Metals, Microelectronics, Microsystems, MOS devices, MOSFET devices, Oxide semiconductors, Semiconducting silicon, Silicon carbide, Substrates, Wide band gap semiconductors, Anti-parallel diodes, Deformation and stress, Direct bonded coppers, Early design stages, Electrical behaviors, High switching frequencies, Parasitic inductances, Thermomechanical simulation, Electric power systems
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-30926DOI: 10.1109/EuroSimE.2017.7926252Scopus ID: 2-s2.0-85020187958ISBN: 9781509043446 OAI: oai:DiVA.org:ri-30926DiVA: diva2:1139243
Conference
18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2017, 3 April 2017 through 5 April 2017. Dresden, Germany.
Available from: 2017-09-07 Created: 2017-09-07 Last updated: 2017-09-07Bibliographically approved

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CiteExportLink to record
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Citation style
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