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Real-Time 100 Gb/s Transmission Using Three-Level Electrical Duobinary Modulation for Short-Reach Optical Interconnects
Ghent University, Belgium.
KTH Royal Institute of Technology, Sweden.
Ghent University, Belgium.
RISE - Research Institutes of Sweden, ICT, Acreo.ORCID iD: 0000-0001-9839-7488
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2017 (English)In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 35, no 7, p. 1313-1319, article id 7795163Article in journal (Refereed) Published
Abstract [en]

Electrical duobinary modulation is considered as a promising way to realize high capacity because of the low bandwidth requirement on the optical/electrical components and high tolerance toward chromatic dispersion. In this paper, we demonstrate a 100 Gb/s electrical duobinary transmission over 2 km standard single-mode fiber reaching a bit error rate under 7% HD-FEC threshold with the use of PRBS7. This link is tested in real-time without any form of digital signal processing. In-house developed SiGe BiCMOS transmitter and receiver ICs are used to drive an electroabsorption modulated laser and decode the received signal from a PIN-photodiode. The performance of 50 and 70 Gb/s nonreturn-to-zero and electrical duobinary transmission are investigated for comparison.

Place, publisher, year, edition, pages
2017. Vol. 35, no 7, p. 1313-1319, article id 7795163
Keywords [en]
Analog equalization, electrical duobinary, optical communication, Bandwidth, Bit error rate, Chromatic dispersion, Digital signal processing, Digital television, Light transmission, Modulation, Semiconducting silicon, Signal processing, Signal receivers, Single mode fibers, Duo-binary, Duobinary modulation, Electrical duobinary transmission, Electro-absorption modulated laser, Non-return to zeros, Standard single mode fibers, Transmitter and receiver
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-30992DOI: 10.1109/JLT.2016.2643778Scopus ID: 2-s2.0-85018947377OAI: oai:DiVA.org:ri-30992DiVA, id: diva2:1137828
Note

 Funding details: NSFC, National Natural Science Foundation of China; Funding text: This work was supported in part by the Industrial Research Fund (IOF) of Ghent University enabling the commercialization of the transceiver chipset through the BiFAST spin-off, in part by the Research FoundationFlanders (FWO), in part by the National Natural Science Foundation of China, in part by the Natural Science Foundation of Guangdong Province, in part by the Swedish Research Council, in part by the Swedish Foundation for Strategic Research, in part by the Gran Gustafsson Foundation, and in part by the EU MC ICONE under Project 60809.

Available from: 2017-09-01 Created: 2017-09-01 Last updated: 2018-07-05Bibliographically approved

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