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Comparison of thermal stress during short-circuit in different types of 1.2 kV SiC transistors based on experiments and simulations
RISE - Research Institutes of Sweden, ICT, Acreo.
RISE - Research Institutes of Sweden, ICT, Acreo.
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2017 (English)In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, 2017, 595-598 p.Conference paper, Published paper (Refereed)
Abstract [en]

The temperature evolution during a short-circuit in the die of three different Silicon Carbide 1200-V power devices is presented. A transient thermal simulation was performed based on the reconstructed structure of commercially available devices. The location of the hottest point in the device is compared. Finally, the analysis supports the necessity to turn off short-circuit events rapidly in order to protect the device after a fault.

Place, publisher, year, edition, pages
2017. 595-598 p.
Keyword [en]
Bipolar junction transistor (BJT), Failure analysis, Junction field-effect transistor (JFET), Power MOSFET, Semiconductor device reliability, Short-circuit current, Silicon carbide (SiC), Widebandgap semiconductors
National Category
Computer and Information Science
Identifiers
URN: urn:nbn:se:ri:diva-31105DOI: 10.4028/www.scientific.net/MSF.897.595Scopus ID: 2-s2.0-85020002693ISBN: 9783035710434 OAI: oai:DiVA.org:ri-31105DiVA: diva2:1136547
Conference
25 September 2016 through 29 September 2016
Note

 Funding details: Energimyndigheten; Funding text: The support of Vinnova, Sweden´s innovation agency, and Swedish Energy Agency is acknowledged.

Available from: 2017-08-28 Created: 2017-08-28 Last updated: 2017-08-28Bibliographically approved

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