Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier
Ascatron AB, Sweden.
Ascatron AB, Sweden.
Ascatron AB, SwedenAscatron AB, Sweden.
Ascatron AB, Sweden.
Show others and affiliations
2017 (English)In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, 2017, 455-458 p.Conference paper, Published paper (Refereed)
Abstract [en]

1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers, as well as grid size and spacing dimensions, in order to obtain low on-resistance and reasonable leakage current even at high temperatures. The device behavior at temperatures ranging from 25 to 250ºC is analyzed and measured on wafer level. The forward voltage drop of 1.1 V at 100 A/cm2 and 3.8 V at 1000 A/cm2 is measured, respectively. At reverse voltage of 1 kV, a leakage current density below 0.1 μA/cm2 and below 0.1 mA/cm2 is measured at 25 and 250ºC, respectively. This proves the effective shielding effect of the BG-JBS design and provides benefits in high voltage applications, particularly for high temperature operation.

Place, publisher, year, edition, pages
2017. 455-458 p.
Keyword [en]
Buried grid, High temperature, High voltage, Junction barrier Schottky (JBS), Silicon carbide (SiC), High temperature applications, High temperature operations, Rectifying circuits, Schottky barrier diodes, Semiconductor junctions, Silicon, Silicon carbide, Silicon wafers, Junction Barrier Schottky, Silicon carbides (SiC), Power semiconductor diodes
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-31120DOI: 10.4028/www.scientific.net/MSF.897.455Scopus ID: 2-s2.0-85020051562ISBN: 9783035710434 OAI: oai:DiVA.org:ri-31120DiVA: diva2:1136496
Conference
25 September 2016 through 29 September 2016
Available from: 2017-08-28 Created: 2017-08-28 Last updated: 2017-08-29Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus
By organisation
Acreo
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 9 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.27.0