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Wafer-scale epitaxial graphene on SiC for sensing applications
RISE, Swedish ICT, Acreo.
RISE, Swedish ICT, Acreo.
RISE, Swedish ICT, Acreo.
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2015 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2’’ 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene’s uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer’s method were also fabricated for comparison.

Place, publisher, year, edition, pages
2015.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:ri:diva-25387DOI: 10.1117/12.2202440OAI: oai:DiVA.org:ri-25387DiVA, id: diva2:1132459
Conference
Proc. of SPIE Vol. 9668, 96685T. 2015. Sydney, New South Wales, Australia
Available from: 2018-04-11 Created: 2016-10-31 Last updated: 2018-04-11Bibliographically approved

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