Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Wafer-scale epitaxial graphene on SiC for sensing applications
RISE, Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
RISE, Swedish ICT, Acreo.
KTH Royal Institute of Technology, Sweden.
RISE, Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.ORCID iD: 0000-0002-8626-0975
Show others and affiliations
2015 (English)In: Wafer-scale epitaxial graphene on SiC for sensing applications, 2015, Vol. 9668, article id 96685TConference paper, Published paper (Refereed)
Abstract [en]

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2’’ 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene’s uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer’s method were also fabricated for comparison.

Place, publisher, year, edition, pages
2015. Vol. 9668, article id 96685T
Series
Proceedings of SPIE, ISSN 0277-786X, E-ISSN 1996-756X ; 9668
Keywords [en]
Graphene, sensors, SiC, wafer-scale
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:ri:diva-25387DOI: 10.1117/12.2202440Scopus ID: 2-s2.0-84959878067ISBN: 9781628418903 (print)OAI: oai:DiVA.org:ri-25387DiVA, id: diva2:1132459
Conference
SPIE Micro+Nano Materials, Devices, and Applications, December 6-9. 2015, Sydney, Australia
Available from: 2018-04-11 Created: 2016-10-31 Last updated: 2023-04-05Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records

Zhao, Wei

Search in DiVA

By author/editor
Zhao, Wei
By organisation
Acreo
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 93 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf