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Thermal Simulations and Experimental Verification of Power Modules Designed for Double Sided Cooling
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.ORCID iD: 0000-0002-6483-8924
Volvo Group Truck Technology.
Fraunhofer ENAS.
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
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2016 (English)In: Electronic Components and Technology, ISSN 0569-5503, ISSN 05695503, 1415-1422 p.Article in journal, (Refereed) Published
Abstract [en]

Cooling power modules on both sides of the active switching devices reduces the operational junction temperature compared to conventional single sided cooling. In this work, thermal simulations of power modules based on single sided cooling concepts are compared with double sided cooling counterparts. Expected junction temperatures, maximum temperatures and maximum current capability is analyzed. In addition, experimental verification in the form of comparisons with thermal characterization tests for both single-And double sided power modules based on SiC bipolar junction transistors is presented. Results from simulations show that cooling of both sides of the active switching devices can reduce the thermal resistance by more than 40 percent. This number depends on the heat transfer coefficient. From one example, simulating a worst case stall condition of the electric machine, the use of double sided cooling reduces the maximum junction temperature from 167 °C to 106 °C at a load current of 300 A using a heat transfer coefficient of 4 kW/m2K and 4 kHz switching frequency. Furthermore, the temperature decreases to 97°C if AlN-based DBC substrates are used instead of alumina DBCs. Results from the experimental comparison between double-And single sided cooling showed that the maximum temperature for a load current range of 15 A to 50 A was reduced by 18 percent to 55 percent by using double sided cooling. At a device temperature of 60 °C, the increased thermal capability of the double sided version allowed for a 20 A higher load current, which corresponded to operation under 50 percent higher power losses. Double sided cooling also increased the maximum current capability through a single SiC BJT by more than 20 percent beyond the maximum current capability through the single sided cooling version.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2016. 1415-1422 p.
Keyword [en]
Alumina, Bipolar transistors, Electric power systems, Heat transfer, Heat transfer coefficients, Network components, Packaging, Power bipolar transistors, Silicon carbide, Double-sided cooling, Experimental comparison, Experimental verification, Junction temperatures, Power module, SiC bipolar junction transistors, Thermal characterization, Thermal simulations, Cooling
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:ri:diva-30181DOI: 10.1109/ECTC.2016.319Scopus ID: 2-s2.0-84987837236OAI: oai:DiVA.org:ri-30181DiVA: diva2:1129378
Conference
Electronic Components and Technology ConferenceThe Cosmopolitan of Las Vegas; United States; 31 May 2016 through 3 June 2016
Available from: 2017-08-02 Created: 2017-08-02 Last updated: 2017-08-03Bibliographically approved

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Brinkfeldt, KlasAndersson, Dag
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