Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design
Lund University, Lund, Sweden.
Lund University, Lund, Sweden.
Lund University, Lund, Sweden.
RISE - Research Institutes of Sweden, ICT, Acreo.
2017 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 17, no 2, 1121-1126 p.Article in journal (Refereed) Published
Abstract [en]

Electrical characterization of nanowires is a time-consuming and challenging task due to the complexity of single nanowire device fabrication and the difficulty in interpreting the measurements. We present a method to measure Hall effect in nanowires using a three-probe device that is simpler to fabricate than previous four-probe nanowire Hall devices and allows characterization of nanowires with smaller diameter. Extraction of charge carrier concentration from the three-probe measurements using an analytical model is discussed and compared to simulations. The validity of the method is experimentally verified by a comparison between results obtained with the three-probe method and results obtained using four-probe nanowire Hall measurements. In addition, a nanowire with a diameter of only 65 nm is characterized to demonstrate the capabilities of the method. The three-probe Hall effect method offers a relatively fast and simple, yet accurate way to quantify the charge carrier concentration in nanowires and has the potential to become a standard characterization technique for nanowires.

Place, publisher, year, edition, pages
2017. Vol. 17, no 2, 1121-1126 p.
Keyword [en]
doping, electrical characterization, Hall effect, Nanowire, Carrier concentration, Characterization, Charge carriers, Doping (additives), Probes, Characterization techniques, Hall devices, Hall measurements, Probe devices, Probe measurements, Probe methods, Single nanowires, Nanowires
National Category
Computer and Information Science
Identifiers
URN: urn:nbn:se:ri:diva-29346DOI: 10.1021/acs.nanolett.6b04723ScopusID: 2-s2.0-85011965361OAI: oai:DiVA.org:ri-29346DiVA: diva2:1093889
Available from: 2017-05-08 Created: 2017-05-08 Last updated: 2017-05-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus
By organisation
Acreo
In the same journal
Nano letters (Print)
Computer and Information Science

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 17 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.24.1