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High-Efficiency Power Conversion Using Silicon Carbide Power Electronics
KTH, Elektrisk energiomvandling.ORCID iD: 0000-0002-1755-1365
KTH, Elektrisk energiomvandling.
KTH, Elektrisk energiomvandling.
KTH, Elektrisk energiomvandling.ORCID iD: 0000-0001-7922-3407
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2013 (English)In: Proc. of International Conference on silicon carbide and related materials (ICSCRM) 2013, Miyazaki, Japan, Sept. 29–Oct. 4, 2013, Trans Tech Publications Inc. , 2013, 1083-1088 p.Conference paper, Published paper (Refereed)
Abstract [en]

The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act. Only in the highest power range the devices are missing. Another important step towards high powers is to find new solutions for multi-chip circuit designs that are adapted to the high possible switching speeds of unipolar silicon carbide power transistors.

Place, publisher, year, edition, pages
Trans Tech Publications Inc. , 2013. 1083-1088 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 778/780
Keyword [en]
Power Electronics, Inverter, dc-dc converter, gate-drive circuit, reverse conduction, SiC JFET, SiC BJT, SiC MOSFET, parallel connection, modular multilevel converter
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
URN: urn:nbn:se:ri:diva-27965DOI: 10.4028/www.scientific.net/MSF.778-780.1083ISBN: 9783038350101 (print)OAI: oai:DiVA.org:ri-27965DiVA: diva2:1069863
Conference
International Conference on silicon carbide and related materials (ICSCRM) 2013, Miyazaki, Japan, Sept. 29–Oct. 4, 2013
Funder
StandUp
Available from: 2013-10-30 Created: 2017-01-30Bibliographically approved

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Nee, Hans-PeterTolstoy, GeorgColmenares, JuanSadik, Diane

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v. 2.29.1