Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High-Power Modular Multilevel Converters With SiC JFETs
KTH, Elektrisk energiomvandling.
KTH, Elektrisk energiomvandling.ORCID iD: 0000-0001-7922-3407
KTH, Elektrisk energiomvandling.
KTH, Elektrisk energiomvandling.
Show others and affiliations
2012 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 27, no 1, 28-36 p.Article in journal (Refereed) Published
Abstract [en]

This paper studies the possibility of building a modular multilevel converter (M2C) using silicon carbide (SiC) switches. The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon-insulated gate bipolar transistors. Both SiC BJTs and JFETs are considered and compared in order to choose the most suitable technology. One of the submodules of a down-scaled 3 kVA prototype M2C is replaced with a submodule with SiC JFETs without antiparallel diodes. It is shown that the diode-less operation is possible with the JFETs conducting in the negative direction, leaving the possibility to use the body diode during the switching transients. Experimental waveforms for the SiC submodule verify the feasibility during normal steady-state operation. The loss estimation shows that a 300 MW M2C for high-voltage direct current transmission would potentially have an efficiency of approximately 99.8% if equipped with future 3.3 kV 1.2 kA SiC JFETs.

Place, publisher, year, edition, pages
IEEE Press , 2012. Vol. 27, no 1, 28-36 p.
Keyword [en]
Diodeless operation, high voltage directcurrent transmission, modular multilevel converter, SiC JFETs, silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:ri:diva-27960DOI: 10.1109/TPEL.2011.2155671ISI: 000298048500001Scopus ID: 2-s2.0-83655192819OAI: oai:DiVA.org:ri-27960DiVA: diva2:1069786
Available from: 2017-01-30 Created: 2017-01-30 Last updated: 2017-11-29Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopusIEEEXplore

Authority records BETA

Tolstoy, GeorgLim, Jang-KwonNee, Hans-Peter

Search in DiVA

By author/editor
Tolstoy, GeorgLim, Jang-KwonNee, Hans-Peter
By organisation
Acreo
In the same journal
IEEE transactions on power electronics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 52 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.29.1