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Merits of Buried Grid Technology for Advanced SiC Device Concepts
RISE, Swedish ICT, Acreo.
RISE, Swedish ICT, Acreo.
RISE, Swedish ICT, Acreo.
RISE, Swedish ICT, Acreo.
2011 (English)In: ECS Transactions, ISSN 1938-5862, E-ISSN 1938-6737, Vol. 41, no 8, 155-162 p.Article in journal, Meeting abstract (Refereed) Published
Abstract [en]

Some chosen examples of the use of buried grid technology for advanced SiC devices are discussed. First example is development of normally-off and normally-on JFETs. Second is the development of Schottky diodes for high temperature operation. Other examples are efficient junction termination and avalanche UV detector. Experimental results are used in support of simulations.

Place, publisher, year, edition, pages
2011. Vol. 41, no 8, 155-162 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-27900DOI: 10.1149/1.3631493OAI: oai:DiVA.org:ri-27900DiVA: diva2:1066619
Available from: 2017-01-18 Created: 2017-01-18 Last updated: 2017-02-28Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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