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InAs/GaAs p–i–p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
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2014 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 0, no 23, 1731-1733 p.Article in journal (Refereed) Published
Abstract [en]

High-temperature operating performance of p-i-p quantum dots-in-a-well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped self-assembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

Place, publisher, year, edition, pages
2014. Vol. 0, no 23, 1731-1733 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:ri:diva-27896DOI: 10.1049/el.2014.2437OAI: oai:DiVA.org:ri-27896DiVA: diva2:1066613
Available from: 2017-01-18 Created: 2017-01-18 Last updated: 2017-02-28Bibliographically approved

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