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Reliability study of a RF power amplifier with GaN-on-SiC HEMTs
RISE, SP – Sveriges Tekniska Forskningsinstitut.
RISE, Swedish ICT, Acreo.
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2016 (English)In: ECS Transactions, 2016, no 12, 49-59 p.Conference paper, Published paper (Refereed)
Abstract [en]

RF power amplifier demonstrators containing each one GaN-on- SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat noleads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. Two types of lead-free solders (Sn63Pb36Ag2 and SnAgCu (SAC305)) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermo-mechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed. © The Electrochemical Society.

Place, publisher, year, edition, pages
2016. no 12, 49-59 p.
Keyword [en]
Gallium nitride, Lead, Lead-free solders, Nitrides, Polychlorinated biphenyls, Power amplifiers, Silicon carbide, Soldering alloys, Thermal conductivity, Threshold voltage, Tin, Cold plates, Current saturation, Current stress, Electrical performance, Quad flat no-leads, RF power amplifiers, Thermomechanical reliability, Threshold voltage shifts, Radio frequency amplifiers
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-27663DOI: 10.1149/07512.0049ecstScopus ID: 2-s2.0-84991511070ISBN: 9781607685395 (print)OAI: oai:DiVA.org:ri-27663DiVA: diva2:1059320
Conference
Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting, 2 October 2016 through 7 October 2016
Note

References: Mishra, U.K., Shen, L., Kazior, T.E., Wu, Y.-F., (2008) Proc. of the IEEE, 96 (2), p. 287; Kim, H., Tilak, V., Green, B.M., Smart, J.A., Schaff, W.J., Shealy, J.R., Eastman, L.F., (2001) Phys. Stat. Sol. (A), 188 (1), p. 203; Chou, Y.C., Leung, D., Smorchkova, I., Wojtowicz, M., Grunbacher, R., Callejo, L., Kan, Q., Oki, A., (2004) Microelectron. Rel., 44 (5), p. 1033; Zanoni, E., Meneghesso, G., Meneghini, M., Stocco, A., Rampazzo, F., Silvestri, R., Rossetto, I., Ronchi, N., (2011) ECS Trans., 41 (8), p. 237; Meneghesso, G., Meneghini, M., Bisi, D., Silvestri, R., Zanandrea, A., Hilt, O., Bahat-Treidel, E., Zanoni, E., (2013) ECS Trans., 58 (4), p. 187; McLean, F.B., Boesch, H.E., Winokur, P.S., McGarrity, J.M., Oswald, R.B., (1974) IEEE Trans. on Nucl. Sci., NS-21 (12), p. 47

Available from: 2016-12-22 Created: 2016-12-21 Last updated: 2016-12-22Bibliographically approved

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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
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  • en-GB
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