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Surface oxidation of silicon carbide: quantitative measurement and Rh effect
YKI – Ytkemiska institutet.
1992 (English)In: Materials Chemistry and Physics, ISSN 0254-0584, E-ISSN 1879-3312, Vol. 30, 273-277 p.Article in journal (Refereed)
Abstract [en]

The oxidation degree of a commercial silicon carbide (SiC) powder was studied by means of Fourier transform infrared spectroscopy, using the intensity of the (SiO2) band at 450 cm-1 for measurements. Results are related to data obtained by LECO and gravimetric measurements. The influence of water in oxygen on the rate of the oxidation process was particularly examined. It was found that water alone had an oxidizing efficiency and that its mixture with oxygen increased the effect of the latter. The presence of Rh particles on SiC promoted the formation of SiO2. However, as shown by the IR study of CO adsorption, this formation embedded the metal particles. This effect can be avoided by loading Rh on a precalcined SiC sample.

Place, publisher, year, edition, pages
1992. Vol. 30, 273-277 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-27310OAI: oai:DiVA.org:ri-27310DiVA: diva2:1054314
Note
A728Available from: 2016-12-08 Created: 2016-12-08Bibliographically approved

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