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Surface chemical analysis of oxidized α-SiC powders by electron spectroscopy
YKI – Ytkemiska institutet.
1990 (English)In: Journal of Colloid and Interface Science, ISSN 0021-9797, E-ISSN 1095-7103, Vol. 138, 16-20 p.Article in journal (Refereed)
Abstract [en]

The oxidation behavior of ultrafine α-SiC powder was studied in air at temperatures up to 1100°C. The thickness of the oxidized film that formed was determined by electron spectroscopy for chemical analysis at a range of oxidation times and from this data the oxidation rates were calculated. From an Arrhenius plot a relatively low value (≈45 kJ/mol) for the apparent activation energy was obtained for the initial stages of the oxidation process. This value appears to support the mechanism involving the diffusion of oxidant species through the surface film.

Place, publisher, year, edition, pages
1990. Vol. 138, 16-20 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-26783OAI: oai:DiVA.org:ri-26783DiVA: diva2:1053786
Note
A604Available from: 2016-12-08 Created: 2016-12-08Bibliographically approved

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