The oxidation behavior of ultrafine α-SiC powder was studied in air at temperatures up to 1100°C. The thickness of the oxidized film that formed was determined by electron spectroscopy for chemical analysis at a range of oxidation times and from this data the oxidation rates were calculated. From an Arrhenius plot a relatively low value (≈45 kJ/mol) for the apparent activation energy was obtained for the initial stages of the oxidation process. This value appears to support the mechanism involving the diffusion of oxidant species through the surface film.