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Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants
Chalmers University of Technology, Sweden.ORCID-id: 0000-0003-1962-5572
Vise andre og tillknytning
2018 (engelsk)Inngår i: Nature Communications, E-ISSN 2041-1723, Vol. 9, nr 1Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC—achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly(methyl-methacrylate)—proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral, large-area graphene with carrier mobilities 70 000 cm2 V−1 s−1 at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin-coating wafer-scale substrates in ambient conditions, opens up a scalable technological route toward expanding the functionality of 2D materials. 

sted, utgiver, år, opplag, sider
Nature Publishing Group , 2018. Vol. 9, nr 1
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URN: urn:nbn:se:ri:diva-68177DOI: 10.1038/s41467-018-06352-5Scopus ID: 2-s2.0-85054095290OAI: oai:DiVA.org:ri-68177DiVA, id: diva2:1817246
Tilgjengelig fra: 2023-12-05 Laget: 2023-12-05 Sist oppdatert: 2023-12-05bibliografisk kontrollert

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