Robust and accurate prognostics models for estimation of remaining useful life (RUL) are becoming an increasingly important aspect of research in reliability and safety in modern electronic components and systems. In this work, a data driven approach to the prognostics problem is presented. In particular, machine learning models are trained to predict the RUL of wire-bonded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) subjected to power cycling until failure. During such power cycling, ON-state voltage and various temperature measurements are continuously collected. As the data set contains full run-to-failure trajectories, the issue of estimating RUL is naturally formulated in terms of supervised learning. Three neural network architectures were trained, evaluated, and compared on the RUL problem: a temporal convolutional neural network (TCN), a long short-term memory neural network (LSTM) and a convolutional gated recurrent neural network (Conv-GRU). While the results show that all networks perform well on held out testing data if the testing samples are of similar aging acceleration as the samples in the training data set, performance on out-of-distribution data is significantly lower. To this end, we discuss potential research directions to improve model performance in such scenarios.