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Packaging Induced Stresses in Embedded and Molded GaN Power Electronics Components
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.ORCID iD: 0000-0002-3548-547X
RISE Research Institutes of Sweden, Materials and Production, Manufacturing Processes.ORCID iD: 0000-0003-2991-2911
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.ORCID iD: 0000-0002-2232-7835
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.
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2023 (English)In: Int. Conf. Therm., Mech. Multi-Phys. Simul. Exp. Microelectron. Microsyst., EuroSimE, Institute of Electrical and Electronics Engineers Inc. , 2023Conference paper, Published paper (Refereed)
Abstract [en]

Residual stresses created during the packaging process can adversely affect the reliability of electronics components. We used incremental hole-drilling method, following the ASTM E 837-20 standard, to measure packaging induced residual stresses in discrete packages of power electronics components. For this purpose, we bonded a strain gauge on the surface of a Gallium Nitride (GaN) power component, drilled a hole through the thickness of the component in several incremental steps, recorded the relaxed strain data on the sample surface using the strain gauge, and finally calculated the residual stresses from the measured strain data. The recorded strains and the residual stresses are related by the compliance coefficients. For the hole drilling method in the isotropic materials, the compliance coefficients are calculated from the analytical solutions, and available in the ASTM standard. But for the orthotropic multilayered components typically found in microelectronics assemblies, numerical solutions are necessary. We developed a subroutine in ANSYS APDL to calculate the compliance coefficients of the hole drilling test in the molded and embedded power electronics components. This can extend the capability of the hole drilling method to determine residual stresses in more complex layered structures found in electronics. 

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2023.
Keywords [en]
ASTM standards, Elasticity, Gallium nitride, III-V semiconductors, Microelectronics, Strain, Strain gages, Structural design, Discrete package, Electronic component, Incremental hole drilling method, Packaging induced stress, Packaging process, Power components, Power electronic components, Strain data, Strain-gages, Residual stresses
National Category
Applied Mechanics
Identifiers
URN: urn:nbn:se:ri:diva-65629DOI: 10.1109/EuroSimE56861.2023.10100830Scopus ID: 2-s2.0-85158147217OAI: oai:DiVA.org:ri-65629DiVA, id: diva2:1777838
Conference
2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2023
Note

 Correspondence Address: S. Akbari; Rise Research Institutes of Sweden, Sweden; This project has received funding from European Union s Horizon 2020 research and innovation programme (UltimateGaN project, grant agreement No 826392). It was also supported by Future Power Electronics Project funded by the ICT- Sweden.

Available from: 2023-06-30 Created: 2023-06-30 Last updated: 2023-10-30Bibliographically approved

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Akbari, SaeedHolmberg, JonasAndersson, DagBrinkfeldt, Klas

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