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P-GaN activation through oxygen-assisted annealing - What is the role of oxygen in activation of Mg-doping of GaN?
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.ORCID iD: 0000-0002-8085-1598
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.
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2022 (English)In: 2022 Compound Semiconductor Week, CSW 2022, Institute of Electrical and Electronics Engineers Inc. , 2022Conference paper, Published paper (Refereed)
Abstract [en]

We present a systematic investigation of activation annealing of Mg as p-type doping in GaN. The diffusion of Mg and H by rapid thermal processing (RTP) at 700 °C to 975 °C together with the effect of the ambient gas are investigated by SIMS, XRD, AFM, and electrical measurements. The observed diffusion of H to the substrate emphasizes the importance of understanding the diffusion and reactions of ambient N, O, and H in the GaN layers.We conclude that optimization of the resulting hole density, except the Mg concentration and RTP temperature, the surface morphology, the thickness of the Mg-doped GaN and the thickness of any layer covering it must be considered. 

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2022.
Keywords [en]
Mg-doping, p-type GaN, RTP activation, Chemical activation, Diffusion, Gallium nitride, Hole concentration, Magnesium, Morphology, Oxygen, Surface morphology, Activation annealing, AFM, Ambient gas, P-type, P-type doping, Rapid thermal processing activation, Rapid-thermal processing, XRD measurements, III-V semiconductors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:ri:diva-61409DOI: 10.1109/CSW55288.2022.9930382Scopus ID: 2-s2.0-85142612067ISBN: 9781665453400 (print)OAI: oai:DiVA.org:ri-61409DiVA, id: diva2:1718068
Conference
2022 Compound Semiconductor Week, CSW 2022, 1 June 2022 through 3 June 2022
Available from: 2022-12-12 Created: 2022-12-12 Last updated: 2023-06-05Bibliographically approved

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Kumar, AshutoshRamvall, Peter

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