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Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene
RISE Research Institutes of Sweden, Safety and Transport, Measurement Technology. Chalmers University of Technology, Sweden.ORCID iD: 0000-0003-1962-5572
Chalmers University of Technology, Sweden.
Chalmers University of Technology, Sweden.
Chalmers University of Technology, Sweden.
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2022 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 120, no 19, article id 191101Article in journal (Refereed) Published
Abstract [en]

We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with a peak external quantum efficiency of η ∼85% for wavelengths λ = 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications. © 2022 Author(s).

Place, publisher, year, edition, pages
American Institute of Physics Inc. , 2022. Vol. 120, no 19, article id 191101
Keywords [en]
Efficiency, Metals, Quantum efficiency, Silicon detectors, Epitaxial graphene, External quantum efficiency, Highest temperature, Internal quantum efficiency, Metal-semiconductor-metal detectors, Performance, Reflection loss, Solar blind ultraviolet, Ultra violet detection, Ultraviolet detection, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:ri:diva-59328DOI: 10.1063/5.0090219Scopus ID: 2-s2.0-85130080682OAI: oai:DiVA.org:ri-59328DiVA, id: diva2:1672959
Note

Funding details: Stiftelsen för Strategisk Forskning, SSF, 2019-00068, GMT14-0077, RMA15-0024; Funding text 1: This work was jointly supported by the Swedish Foundation for Strategic Research (Nos. GMT14-0077 and RMA15-0024), Chalmers Excellence Initiative Nano, and 2D TECH VINNOVA competence Center (Ref. No. 2019-00068). This work was performed in part at Myfab Chalmers.

Available from: 2022-06-20 Created: 2022-06-20 Last updated: 2023-12-05Bibliographically approved

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