Vertical GaN devices: Process and reliabilityVise andre og tillknytning
2021 (engelsk)Inngår i: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 126, artikkel-id 114218Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density. © 2021
sted, utgiver, år, opplag, sider
Elsevier Ltd , 2021. Vol. 126, artikkel-id 114218
Emneord [en]
200 mm CMOS compatible, GaN-on-polyAlN, Power electronics, Vertical GaN device, CMOS integrated circuits, Gallium nitride, CMOS Compatible, CMOS-compatible technology, In-process, Optimisations, Performance, Power-electronics, Recent progress, III-V semiconductors
HSV kategori
Identifikatorer
URN: urn:nbn:se:ri:diva-57941DOI: 10.1016/j.microrel.2021.114218Scopus ID: 2-s2.0-85120857060OAI: oai:DiVA.org:ri-57941DiVA, id: diva2:1626650
Merknad
Funding details: Horizon 2020; Funding details: Electronic Components and Systems for European Leadership, ECSEL, 826392; Funding text 1: This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 826392 . The JU receives support from the European Union's Horizon 2020 research and innovation program and Austria, Belgium, Germany, Italy, Slovakia, Spain, Sweden, Norway, Switzerland.
2022-01-112022-01-112023-06-05bibliografisk kontrollert