Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
Friedrich-Alexander University Erlangen-Nuremberg, Germany.
Friedrich-Alexander University Erlangen-Nuremberg, Germany.
Friedrich-Alexander University Erlangen-Nuremberg, Germany.
Friedrich-Alexander University Erlangen-Nuremberg, Germany.
Vise andre og tillknytning
2012 (engelsk)Inngår i: Nature Communications, E-ISSN 2041-1723, Vol. 3, artikkel-id 957Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10 4 and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

sted, utgiver, år, opplag, sider
2012. Vol. 3, artikkel-id 957
Emneord [en]
graphene, silicon carbide, water, graphite, silicon, article, biochip, diode, energy, frequency analysis, semiconductor, chemistry, electronics
HSV kategori
Identifikatorer
URN: urn:nbn:se:ri:diva-51823DOI: 10.1038/ncomms1955Scopus ID: 2-s2.0-84864864624OAI: oai:DiVA.org:ri-51823DiVA, id: diva2:1516524
Merknad

The work was supported by the DFG through SFB953 and the cluster of excellence EAM. We thank Thomas Seyller for experimental support and fruitful discussions. S.H., M.K. and H.B.W. conceived the experiment. S.H., supported by A.A., carried out the experiments. M.A. provided device simulations. D.W. and J.J. contributed to discussion. S.R. and A.S. fabricated the epitaxial layers. S.H., D.W., J.J., M.K. and H.B.W. wrote the manuscript.

Tilgjengelig fra: 2021-01-12 Laget: 2021-01-12 Sist oppdatert: 2023-03-28bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus
Av organisasjonen
I samme tidsskrift
Nature Communications

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 10 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
v. 2.43.0