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PECVD and thermal gate oxides on 3C vs. 4H SiC-Impact on leakage, traps and energy offsets
RISE, Swedish ICT, Acreo.
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2014 (English)In: ECS Transactions, 2014, no 7, p. 237-243Conference paper, Published paper (Refereed)
Abstract [en]

Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C- and 4H-SiC were compared. The difference in trap energy distributions between the polytypes demonstrated in this experiment confirms that the 3C-SiC polytype is less vulnerable to near-interface traps (NIT) which are found in high density in the 4H-SiC. It was also shown that the examined 3C-SiC substrates demonstrated higher leakage currents due to higher dislocation concentration compared with 4H-SiC. Finally, the energy band model of the SiC MOS devices was described quantitatively which could be considered in further development of the devices and processes.

Place, publisher, year, edition, pages
2014. no 7, p. 237-243
Keywords [en]
Band structure, Gallium nitride, Gates (transistor), Leakage currents, MOS capacitors, MOS devices, Nitrides, Silicon, Energy band models, Energy offset, Gate leakages, Gate oxide, Interface trap (NIT), SiC substrates, Trap density, Trap energy, Silicon carbide
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-35489DOI: 10.1149/06407.0237ecstScopus ID: 2-s2.0-84921048102OAI: oai:DiVA.org:ri-35489DiVA, id: diva2:1263136
Conference
Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 4 - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
Available from: 2018-11-14 Created: 2018-11-14 Last updated: 2018-11-14Bibliographically approved

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