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SiC epi-channel lateral MOSFETs
Hestia Power Inc, Taiwan; Industrial Technology Research Institute, Taiwan.
RISE, Swedish ICT, Acreo.ORCID iD: 0000-0002-9512-2689
Hestia Power Inc., Taiwan; Industrial Technology Research Institute, Taiwan.
RISE, Swedish ICT, Acreo. Ascatron AB, Sweden.
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2014 (English)In: Materials Science Forum, 2014, Vol. 778-780, p. 927-930Conference paper, Published paper (Refereed)
Abstract [en]

SiC lateral MOSFETs with multi-layered epi-channels were studied in this work. The epi-channel consisting of a high concentration n-type epilayer sandwiched between two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, as compared to 1.53 cm2/V.s for inversion type devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V.
Place, publisher, year, edition, pages
2014. Vol. 778-780, p. 927-930
Keywords [en]
4H-SiC, Buried channel, Lateral, Mobility, MOSFET, Carrier mobility, MOSFET devices, Buried channels, Field-effect mobilities, Lateral MOSFETs, Lightly doped, MOS-FET, P-type layers, Silicon carbide
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Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-35507DOI: 10.4028/www.scientific.net/MSF.778-780.927Scopus ID: 2-s2.0-84896089117ISBN: 9783038350101 (print)OAI: oai:DiVA.org:ri-35507DiVA, id: diva2:1263108
Conference
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013; Miyazaki; Japan; 29 September 2013 through 4 October 2013
Available from: 2018-11-14 Created: 2018-11-14 Last updated: 2024-02-07Bibliographically approved

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Bakowski, Mietek

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