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Ytterbium-doped fibers fabricated with atomic layer deposition method
Aalto University, Finland.
RISE., Swedish ICT, Acreo.
NLIGHT Corporation, Finland.
Beneq Oy, Finland.
Vise andre og tillknytning
2012 (engelsk)Inngår i: Optics Express, E-ISSN 1094-4087, Vol. 20, nr 22, s. 25085-95Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report on a new fabrication method of producing ytterbium doped fibers by atomic layer deposition (ALD) in combination with the conventional modified chemical vapor deposition (MCVD) technique. An MCVD soot-preform with a porous layer of SiO2 is coated with layers of Yb2O3 and Al2O3 prior to sintering, using the gas-phase ALD method. An SEM/EDS material analysis study shows that the dopants successfully penetrate the full thickness of 320 μm of the soot layer. An Yb-doped fiber fabricated by this technique shows a background attenuation of 20 dB/km, a uniform longitudinal Yb-doping profile, and good laser characteristics with a slope efficiency of 80%. Furthermore, we present a comparison in terms of photodarkening between the MCVD-ALD fiber and a solution doped fiber, fabricated with the same MCVD recipe. The new MCVD-ALD fiber appears to be more photodarkening resistant.

sted, utgiver, år, opplag, sider
2012. Vol. 20, nr 22, s. 25085-95
Emneord [en]
Atomic layer, Doped fiber, Fabrication method, Gasphase, Laser characteristics, Material analysis, Modified chemical vapor depositions, Porous layers, SEM/EDS, Slope efficiencies, Yb-doped fibers, Yb-doping, Ytterbium doped fibers
HSV kategori
Identifikatorer
URN: urn:nbn:se:ri:diva-32009DOI: 10.1364/OE.20.025085Scopus ID: 2-s2.0-84868261174OAI: oai:DiVA.org:ri-32009DiVA, id: diva2:1151867
Tilgjengelig fra: 2017-10-24 Laget: 2017-10-24 Sist oppdatert: 2022-09-15bibliografisk kontrollert

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