Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Auger recombination in In(Ga)Sb/InAs quantum dots
KTH Royal Institute of Technology, Sweden.
KTH Royal Institute of Technology, Sweden.
KTH Royal Institute of Technology, Sweden.
RISE, Swedish ICT, Acreo.
Show others and affiliations
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 1, article id 013103Article in journal (Refereed) Published
Abstract [en]

We report on the epitaxial formation of type II In0.5Ga0.5Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170-200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 × 10-28 cm6/s for In0.5Ga0.5Sb/InAs quantum dots and 1.47 × 10-27 cm6/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.

Place, publisher, year, edition, pages
2015. Vol. 106, no 1, article id 013103
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-31918DOI: 10.1063/1.4905455OAI: oai:DiVA.org:ri-31918DiVA, id: diva2:1151776
Available from: 2017-10-24 Created: 2017-10-24 Last updated: 2019-07-02Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text
By organisation
Acreo
In the same journal
Applied Physics Letters
Computer and Information Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 7 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.35.7