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Flexible lamination-fabricated ultra-high frequency diodes based on self-supporting semiconducting composite film of silicon micro-particles and nano-fibrillated cellulose
Linköping University, Sweden.
RISE, Swedish ICT, Acreo.ORCID iD: 0000-0002-1182-4051
RISE, Innventia.ORCID iD: 0000-0003-0838-3977
RISE, Swedish ICT, Acreo.ORCID iD: 0000-0002-4575-0193
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2016 (English)In: Scientific Reports, E-ISSN 2045-2322, Vol. 6, article id 28921Article in journal (Refereed) Published
Abstract [en]

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future "internet of things" viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-ÎŒPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-ÎŒPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-ÎŒPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

Place, publisher, year, edition, pages
2016. Vol. 6, article id 28921
National Category
Electrical Engineering, Electronic Engineering, Information Engineering Nano Technology
Identifiers
URN: urn:nbn:se:ri:diva-16289DOI: 10.1038/srep28921Scopus ID: 2-s2.0-84977156842OAI: oai:DiVA.org:ri-16289DiVA, id: diva2:1039538
Available from: 2016-10-24 Created: 2016-10-24 Last updated: 2025-04-22Bibliographically approved

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Wang, XinGranberg, HjalmarAndersson Ersman, Peter

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