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Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments
University of Bath.
CNRS.
RISE, Swerea, Swerea IVF AB.
CNRS.
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2010 (Engelska)Ingår i: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, s. 127-130Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C. ©2010 IEEE.

Ort, förlag, år, upplaga, sidor
2010. s. 127-130
Nationell ämneskategori
Materialteknik
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URN: urn:nbn:se:ri:diva-13432DOI: 10.1109/ASDAM.2010.5666320Scopus ID: 2-s2.0-78651448429ISBN: 9781424485758 (tryckt)OAI: oai:DiVA.org:ri-13432DiVA, id: diva2:973639
Konferens
18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Tillgänglig från: 2016-09-22 Skapad: 2016-09-22Bibliografiskt granskad

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