Scalable Fabrication of Edge Contacts to 2D Materials: Implications for Quantum Resistance Metrology and 2D ElectronicsVisa övriga samt affilieringar
2023 (Engelska)Ingår i: ACS Applied Nano Materials, E-ISSN 2574-0970, Vol. 6, nr 7, s. 6292-Artikel i tidskrift (Refereegranskat) Published
Abstract [en]
We report a reliable and scalable fabrication method for producing electrical contacts to two-dimensional (2D) materials based on the tri-layer resist system. We demonstrate the applicability of this method in devices fabricated on epitaxial graphene on silicon carbide (epigraphene) used as a scalable 2D material platform. For epigraphene, data on nearly 70 contacts result in median values of the one-dimensional (1D) specific contact resistances ρc ∼ 67 Ω·μm and follow the Landauer quantum limit ρc ∼ n-1/2, consistently reaching values ρc < 50 Ω·μm at high carrier densityn. As a proof of concept, we apply the same fabrication method to the transition metal dichalcogenide (TMDC) molybdenum disulfide (MoS2). Our edge contacts enable MoS2 field-effect transistor (FET) behavior with an ON/OFF ratio of >106 at room temperature (>109 at cryogenic temperatures). The fabrication route demonstrated here allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials. © 2023 The Authors.
Ort, förlag, år, upplaga, sidor
American Chemical Society , 2023. Vol. 6, nr 7, s. 6292-
Nyckelord [en]
2D material, edge-contacts, epitaxial graphene, graphene, MoS2, Fabrication, Field effect transistors, Graphene transistors, Layered semiconductors, Molybdenum disulfide, Silicon carbide, Thermal evaporation, Transition metals, Edge contacts, Electrical contacts, Fabrication method, Material-based, Quantum resistance, Resist systems, Tri-layer resists, Two-dimensional
Nationell ämneskategori
Den kondenserade materiens fysik
Identifikatorer
URN: urn:nbn:se:ri:diva-64337DOI: 10.1021/acsanm.3c00652Scopus ID: 2-s2.0-85151511850OAI: oai:DiVA.org:ri-64337DiVA, id: diva2:1755034
Anmärkning
Funding details: 2018-04962, 2021-05252; Funding details: H2020 Marie Skłodowska-Curie Actions, MSCA, 766025; Funding details: Stiftelsen för Strategisk Forskning, SSF, 2019-00068, FFL21-0129, GMT14-0077, RMA15-0024; Funding details: Knut och Alice Wallenbergs Stiftelse, 2019.0140; Funding text 1: This work was jointly supported by the Swedish Foundation for Strategic Research (SSF) (Nos. GMT14-0077, RMA15-0024, and FFL21-0129), Chalmers Area of Advance Nano, Chalmers Area of Advance Energy, 2D TECH VINNOVA competence Center (Ref. 2019-00068), Marie Sklodowska-Curie grant QUESTech No. 766025, Knut and Alice Wallenberg Foundation (2019.0140), and the Swedish Research Council VR (Contract Nos. 2021-05252 and 2018-04962). This work was performed in part at Myfab Chalmers and Chalmers Materials Analysis Laboratory (CMAL). The authors declare that the main data supporting the findings of this study are available within the article and supplementary information. Additional data are available from the corresponding author upon request.
2023-05-052023-05-052024-06-11Bibliografiskt granskad