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Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply
RISE., Swedish ICT, Acreo.ORCID-id: 0000-0002-9512-2689
Alstom Power Sweden AB, Sweden.
RISE., Swedish ICT, Acreo.ORCID-id: 0000-0002-9850-9440
RISE., Swedish ICT, Acreo. Ascatron AB, Sweden.
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2015 (Engelska)Ingår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, nr 2, s. 366-373Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter

Ort, förlag, år, upplaga, sidor
Institute of Electrical and Electronics Engineers Inc. , 2015. Vol. 62, nr 2, s. 366-373
Nyckelord [en]
4H-SiC, avalanche energy, bipolar degradation, carrier lifetime, dynamic on-resistance, Junction Termination Extension (JTE), p-i-n diode, soft switching, DC-DC converters, Diodes, Semiconductor junctions, Silicon carbide, Switching circuits, Avalanche energies, Bipolar degradations, Junction termination extensions, On-resistance, PiN diode, Avalanche diodes
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URN: urn:nbn:se:ri:diva-42056DOI: 10.1109/TED.2014.2361165Scopus ID: 2-s2.0-85027916801OAI: oai:DiVA.org:ri-42056DiVA, id: diva2:1378562
Tillgänglig från: 2019-12-13 Skapad: 2019-12-13 Senast uppdaterad: 2024-04-05Bibliografiskt granskad

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Bakowski, MietekLim, Jang-Kwon

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