SiC epi-channel lateral MOSFETs 2014 (Engelska)Ingår i: Materials Science Forum, 2014, Vol. 778-780, s. 927-930Konferensbidrag, Publicerat paper (Refereegranskat)

Abstract [en]

SiC lateral MOSFETs with multi-layered epi-channels were studied in this work. The epi-channel consisting of a high concentration n-type epilayer sandwiched between two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, as compared to 1.53 cm2/V.s for inversion type devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V.

Ort, förlag, år, upplaga, sidor

2014. Vol. 778-780, s. 927-930

Nyckelord [en]

4H-SiC, Buried channel, Lateral, Mobility, MOSFET, Carrier mobility, MOSFET devices, Buried channels, Field-effect mobilities, Lateral MOSFETs, Lightly doped, MOS-FET, P-type layers, Silicon carbide

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URN: urn:nbn:se:ri:diva-35507DOI: 10.4028/www.scientific.net/MSF.778-780.927Scopus ID: 2-s2.0-84896089117ISBN: 9783038350101 (tryckt)OAI: oai:DiVA.org:ri-35507DiVA, id: diva2:1263108

Konferens

15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013; Miyazaki; Japan; 29 September 2013 through 4 October 2013

Tillgänglig från: 2018-11-14 Skapad: 2018-11-14 Senast uppdaterad: 2024-02-07Bibliografiskt granskad

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Bakowski, Mietek

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Bakowski, Mietek

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