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Planarization of epitaxial SiC trench structures by plasma ion etching
RISE., Swedish ICT, Acreo. Ascatron AB, Sweden.
Ascatron AB, Sweden.
Ascatron AB, Sweden.
Ascatron AB, Sweden.
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2015 (Engelska)Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, s. 549-552Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

In this work, we present a planarization concept for epitaxial SiC trench structures involving reactive ion etching (RIE) and inductive coupled plasma (ICP) dry etching. The general idea is to transfer the flat surface from spun-on BCB/photo-resist layers to deposited silicon dioxide and finally to bulk SiC by applying process conditions with the same etch rate for the different materials. In this way several microns of unwanted material can be removed and planar SiC surfaces are obtained. With this method trench structures filled by epitaxial re-growth can be planarized with smooth surfaces and good homogeneity over the wafer. Cost-efficient device manufacturing can be achieved by using standard semiconductor process equipment. This technology makes it possible to manufacture advanced epitaxial SiC material structures for devices such as trench JBS diodes and double-gate trench JFETs.

Ort, förlag, år, upplaga, sidor
2015. Vol. 821-823, s. 549-552
Nyckelord [en]
Buried grid, Dry etching, ICP, JBS, Planarization, Re-growth, RIE, Trench, Manufacture, Silicon carbide, Silicon wafers, Trenching, Reactive ion etching
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Naturvetenskap
Identifikatorer
URN: urn:nbn:se:ri:diva-35465DOI: 10.4028/www.scientific.net/MSF.821-823.549Scopus ID: 2-s2.0-84950322296ISBN: 9783038354789 (tryckt)OAI: oai:DiVA.org:ri-35465DiVA, id: diva2:1259136
Konferens
European Conference on Silicon Carbide and Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
Tillgänglig från: 2018-10-27 Skapad: 2018-10-27 Senast uppdaterad: 2019-07-11Bibliografiskt granskad

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