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Wafer-scale epitaxial graphene on SiC for sensing applications
RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
RISE., Swedish ICT, Acreo.
KTH Royal Institute of Technology, Sweden.
RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
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2015 (Engelska)Ingår i: Wafer-scale epitaxial graphene on SiC for sensing applications, 2015, Vol. 9668, artikel-id 96685TKonferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2’’ 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene’s uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer’s method were also fabricated for comparison.

Ort, förlag, år, upplaga, sidor
2015. Vol. 9668, artikel-id 96685T
Serie
Proceedings of SPIE, ISSN 0277-786X, E-ISSN 1996-756X ; 9668
Nyckelord [en]
Graphene, sensors, SiC, wafer-scale
Nationell ämneskategori
Elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:ri:diva-25387DOI: 10.1117/12.2202440Scopus ID: 2-s2.0-84959878067ISBN: 9781628418903 (tryckt)OAI: oai:DiVA.org:ri-25387DiVA, id: diva2:1132459
Konferens
SPIE Micro+Nano Materials, Devices, and Applications, December 6-9. 2015, Sydney, Australia
Tillgänglig från: 2018-04-11 Skapad: 2016-10-31 Senast uppdaterad: 2020-02-07Bibliografiskt granskad

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