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Band diagrams and trap distributions in metal-SiO2-SiC(3C) structures with different metal gates
Institute of Electron Technology, Poland.
Institute of Electron Technology, Poland.
Institute of Electron Technology, Poland.
RISE., Swedish ICT, Acreo.ORCID-id: 0000-0002-9512-2689
2012 (engelsk)Inngår i: ECS Transactions, 2012, Vol. 50, nr 3, s. 231-242Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Cubic silicon carbide (3C-SiC) is a particularly promising material for high and medium power MOS transistors, because it offers higher inversion channel mobility than other SiC polytypes. Optimizing the field effect devices made of 3C-SiC and choosing the appropriate materials to be incorporated in the device requires knowledge of the investigated structure band diagram. Hence, the first part of this work is devoted to determination of band diagrams of various MOS structures on 3C-SiC substrates. Since trap densities and distributions are still important for field effect devices on 3C-SiC substrates, the second part of this work is devoted to this problem.

sted, utgiver, år, opplag, sider
2012. Vol. 50, nr 3, s. 231-242
Emneord [en]
Appropriate materials, Cubic silicon carbide (3C-SiC), Different-metal gates, Field-effect devices, Inversion channels, SiC polytypes, SiC substrates, Trap distributions, Epitaxial growth, Gallium nitride, Silicon carbide
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Identifikatorer
URN: urn:nbn:se:ri:diva-51109DOI: 10.1149/05003.0231ecstScopus ID: 2-s2.0-84876878601ISBN: 9781607683513 (tryckt)OAI: oai:DiVA.org:ri-51109DiVA, id: diva2:1514899
Konferanse
2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting, 7 October 2012 through 12 October 2012, Honolulu, HI
Tilgjengelig fra: 2021-01-07 Laget: 2021-01-07 Sist oppdatert: 2024-02-06bibliografisk kontrollert

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