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Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
Lund University, Sweden.
RISE Research Institutes of Sweden, Digitala system. Lund University, Sweden.
Lund University, Sweden.
Lund University, Sweden.
Vise andre og tillknytning
2020 (engelsk)Inngår i: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 12, nr 15, s. 17845-17851Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101̅1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.

sted, utgiver, år, opplag, sider
NLM (Medline) , 2020. Vol. 12, nr 15, s. 17845-17851
Emneord [en]
chemical mechanical polishing, InGaN, micro-LEDs, selective area growth, template, vapor phase epitaxy
HSV kategori
Identifikatorer
URN: urn:nbn:se:ri:diva-44785DOI: 10.1021/acsami.0c00951Scopus ID: 2-s2.0-85083544214OAI: oai:DiVA.org:ri-44785DiVA, id: diva2:1436803
Tilgjengelig fra: 2020-06-08 Laget: 2020-06-08 Sist oppdatert: 2021-06-18bibliografisk kontrollert

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