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InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes
Lund University, Sweden.
Lund University, Sweden.
Lund University, Sweden.
Lund University, Sweden.
Vise andre og tillknytning
2019 (engelsk)Inngår i: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, nr 5, s. 2832-2839Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were made by in situ annealing of InGaN pyramids, whereby InGaN from the pyramid apex was thermally etched away, leaving a c-plane surface, while the inclined {101Ì1} planes of the pyramids were intact. The as-formed c-planes, which are rough with islands of a few tens of nanometers, can be flattened with InGaN regrowth, showing single bilayer steps and high-quality optical properties (full width at half-maximum of photoluminescence at room temperature: 107 meV for In 0.09 Ga 0.91 N and 151 meV for In 0.18 Ga 0.82 N). Such platelets offer surfaces having relaxed lattice constants, thus enabling shifting the quantum well emission from blue (as when grown on GaN) to green and red. For single InGaN quantum wells grown on the c-plane of such InGaN platelets, a sharp interface between the quantum well and the barriers was observed. The emission energy from the quantum well, grown under the same conditions, was shifted from 2.17 eV on In 0.09 Ga 0.91 N platelets to 1.95 eV on In 0.18 Ga 0.82 N platelets as a result of a thicker quantum well and a reduced indium pulling effect on In 0.18 Ga 0.82 N platelets. On the basis of this method, prototype light-emitting diodes were demonstrated with green emission on In 0.09 Ga 0.91 N platelets and red emission on In 0.18 Ga 0.82 N platelets.

sted, utgiver, år, opplag, sider
American Chemical Society , 2019. Vol. 19, nr 5, s. 2832-2839
Emneord [en]
InGaN, light-emitting diodes, metal-organic vapor-phase epitaxy, platelets, selective area growth, Diodes, Gallium nitride, III-V semiconductors, Lattice constants, Light emitting diodes, Metallorganic vapor phase epitaxy, Optical properties, Organometallics, Semiconductor alloys, Emission energies, Green emissions, In-situ annealing, InGaN quantum wells, Metal-organic vapor phase epitaxy, Quantum well emission, Semiconductor quantum wells
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Identifikatorer
URN: urn:nbn:se:ri:diva-38684DOI: 10.1021/acs.nanolett.8b04781Scopus ID: 2-s2.0-85064872288OAI: oai:DiVA.org:ri-38684DiVA, id: diva2:1315020
Tilgjengelig fra: 2019-05-10 Laget: 2019-05-10 Sist oppdatert: 2019-06-28bibliografisk kontrollert

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