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Temperature-dependent characteristics of 4H-SiC buried grid JBS diodes
RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
Ascatron AB, Sweden.
Ascatron AB, Sweden.
Ascatron AB, Sweden.
Vise andre og tillknytning
2015 (engelsk)Inngår i: Materials Science Forum, 2015, Vol. 821-823, s. 600-603Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

4H-SiC Schottky Barrier Diodes (SBD) have been developed using p-type buried grids (BGs) formed by Al implantation. In order to reduce on-state resistance and improve forward conduction, the doping concentration of the channel region between the buried grids was increased. The fabricated diodes were encapsulated with TO-254 packages and electrically evaluated. Experimental forward and reverse characteristics were measured in the temperature range from 25 °C to 250 °C. On a bare die level, the forward voltage drop was reduced from 5.36 V to 3.90 V at 20 A as the channel doping concentration was increased in order to reduce the channel resistance. After encapsulation in a TO-254 package, the forward voltage drop was decreased by approximately 10% due to a lower contact resistance. The on-state resistance of an identical device measured on the bare die and in the TO-254 package increased with increasing temperature due to the decreased electron mobility in the drift region resulting in higher resistance. The incremental contact resistances of the bare dies were larger than in the packaged devices. One key issue associated with conventional Junction Barrier Schottky (JBS) diodes is a high leakage current at high temperature operation over 200 °C. The developed Buried Grid JBS (BG JBS) diode has significantly reduced leakage current due to a better field shielding at the Schottky contact. The leakage current of the packaged BG JBS diodes is compared to conventional SBD and commercial JBS diodes.

sted, utgiver, år, opplag, sider
2015. Vol. 821-823, s. 600-603
Serie
Materials Science Forum, ISSN 0255-5476 ; 821-823
Emneord [en]
4H-SiC, Buried grid (BG), Junction barrier schottky (JBS) diode, Schottky barrier diode (SBD), Contact resistance, Diodes, High temperature operations, Leakage currents, Mixer circuits, Silicon carbide, Forward voltage drops, Increasing temperatures, Junction barrier Schottky diodes, Reverse characteristics, Schottky Barrier Diode(SBD), Temperature dependent, Schottky barrier diodes
HSV kategori
Identifikatorer
URN: urn:nbn:se:ri:diva-35459DOI: 10.4028/www.scientific.net/MSF.821-823.600Scopus ID: 2-s2.0-84950327389ISBN: 9783038354789 (tryckt)OAI: oai:DiVA.org:ri-35459DiVA, id: diva2:1259137
Konferanse
European Conference on Silicon Carbide and Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
Tilgjengelig fra: 2018-10-27 Laget: 2018-10-27 Sist oppdatert: 2019-07-12bibliografisk kontrollert

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