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SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
Halmstad University, Sweden.
Halmstad University, Sweden.
RISE - Research Institutes of Sweden, ICT, Acreo.
RISE - Research Institutes of Sweden, ICT, Acreo.
Show others and affiliations
2018 (English)In: Journal of the Korean Physical Society, ISSN 0374-4884, E-ISSN 1976-8524, Vol. 73, no 11, p. 1604-1611Article in journal (Refereed) Published
Abstract [en]

Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.

Place, publisher, year, edition, pages
2018. Vol. 73, no 11, p. 1604-1611
Keywords [en]
IR detector, LWIR, MWIR, Sb-based thin films, SWIR
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-37045DOI: 10.3938/jkps.73.1604Scopus ID: 2-s2.0-85058784548OAI: oai:DiVA.org:ri-37045DiVA, id: diva2:1280048
Note

Funding details: Swedish Foundation for International Cooperation in Research and Higher Education; Funding details: Korea Institute of Science and Technology, KIST; Funding details: National Research Foundation of Korea, NRF;

Available from: 2019-01-17 Created: 2019-01-17 Last updated: 2019-04-23Bibliographically approved

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