We present the first steps taken towards a graphene quantum Hall effect ac resistance standard at RISE. A new measurement setup has been developed including a graphene quantum Hall effect device suitable for the kilohertz range and a coaxial cryoprobe to be used together with a coaxial impedance bridge based on inductive voltage dividers. 1:1 ratio resistance measurements of the graphene device against a 12.9 kΩ ac resistance standard resulted in a linear frequency dependent (≈ 0.2(μΩ/Ω)/kHz) deviation from the quantized dc value.

We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance. © 2024 Author(s).

The paper reports a results of series of interlaboratory comparisons of low impedance measurements at frequencies relevant for electrochemical impedance spectroscopy (EIS) of commercial lithium-ion cells. Two comparisons are presented. The first, bilateral comparison has focused on low impedance standards calibration in a full complex plane using digital sampling setups. The second comparison has focused on calibration and use of commercial 4-terminal battery EIS meters. Both comparisons have covered the impedance range from 50μ℧ to 100m℧ across the full complex plane in a frequency range from 0.01Hz up to 5kHz. Finally, the paper summarizes practices identified as critical for achieving measurement compatibility among various labs. © 2023 The Authors

In this work we investigate the long-term stability of epitaxial graphene (epigraphene) quantum Hall resistance standards, including single devices and an array device composed of 236 elements providing (R K/236 ≈ 109 Ω) , with R K the von Klitzing constant. All devices utilize the established technique of chemical doping via molecular dopants to achieve homogenous doping and control over carrier density. However, optimal storage conditions and the long-term stability of molecular dopants for metrological applications have not been widely studied. In this work we aim to identify simple storage techniques that use readily available and cost-effective materials which provide long-term stability for devices without the need for advanced laboratory equipment. The devices are stored in glass bottles with four different environments: ambient, oxygen absorber, silica gel desiccant, and oxygen absorber/desiccant mixture. We have tracked the carrier densities, mobilities, and quantization accuracies of eight different epigraphene quantum Hall chips for over two years. We observe the highest stability (i.e. lowest change in carrier density) for samples stored in oxygen absorber/desiccant mixture, with a relative change in carrier density below 0.01% per day and no discernable degradation of quantization accuracy at the part-per-billion level. This storage technique yields a comparable stability to the currently established best storage method of inert nitrogen atmosphere, but it is much easier to realize in practice. It is possible to further optimize the mixture of oxygen absorber/desiccant for even greater stability performance in the future. We foresee that this technique can allow for simple and stable long-term storage of polymer-encapsulated molecular doped epigraphene quantum Hall standards, removing another barrier for their wide-spread use in practical metrology. 

We report a reliable and scalable fabrication method for producing electrical contacts to two-dimensional (2D) materials based on the tri-layer resist system. We demonstrate the applicability of this method in devices fabricated on epitaxial graphene on silicon carbide (epigraphene) used as a scalable 2D material platform. For epigraphene, data on nearly 70 contacts result in median values of the one-dimensional (1D) specific contact resistances ρc ∼ 67 Ω·μm and follow the Landauer quantum limit ρc ∼ n-1/2, consistently reaching values ρc &lt; 50 Ω·μm at high carrier densityn. As a proof of concept, we apply the same fabrication method to the transition metal dichalcogenide (TMDC) molybdenum disulfide (MoS2). Our edge contacts enable MoS2 field-effect transistor (FET) behavior with an ON/OFF ratio of &gt;106 at room temperature (&gt;109 at cryogenic temperatures). The fabrication route demonstrated here allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials. © 2023 The Authors. 

Graphene quantum Hall effect (QHE) resistance standards have the potential to provide superior realizations of three key units in the new International System of Units (SI): the ohm, the ampere, and the kilogram (Kibble Balance). However, these prospects require different resistance values than practically achievable in single graphene devices (~12.9 kΩ), and they need bias currents two orders of magnitude higher than typical breakdown currents IC ~ 100 μA. Here we present experiments on quantization accuracy of a 236-element quantum Hall array (QHA), demonstrating RK/236 ≈ 109 Ω with 0.2 part-per-billion (nΩ/Ω) accuracy with IC ≥ 5 mA (~1 nΩ/Ω accuracy for IC = 8.5 mA), using epitaxial graphene on silicon carbide (epigraphene). The array accuracy, comparable to the most precise universality tests of QHE, together with the scalability and reliability of this approach, pave the road for wider use of graphene in the new SI and beyond. © 2022, The Author(s).

We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with a peak external quantum efficiency of η ∼85% for wavelengths λ = 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications. © 2022 Author(s).

The paper reports an interlaboratory comparison of low impedance measurements at frequencies relevant for electrochemical impedance spectroscopy (EIS) of commercial lithium-ion cells. The comparisons cover an impedance range from 50 μΩ to 100 mΩ across the full complex plane in a frequency range 0.01 Hz up to 5 kHz. A first comparison covered calibration of low impedance standards by reference digital sampling impedance setups in 4-terminal and 4 terminal-pair connections. A second comparison used commercial 4-terminal EIS meters to measure the low impedance standards characterised in the first comparison.

The paper reports an interlaboratory comparison of low impedance measurements at frequencies relevant for electrochemical impedance spectroscopy (EIS) of commercial lithium-ion cells. The comparisons cover an impedance range from 50 ΌΩ to 100 mΩ across the full complex plane in a frequency range 0.01 Hz up to 5 kHz. A first comparison covered calibration of low impedance standards by reference digital sampling impedance setups in 4-terminal and 4 terminal-pair connections. A second comparison used commercial 4-terminal EIS meters to measure the low impedance standards characterised in the first comparison.